Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium

Автор(ы) D.Yu. Matveev
Принадлежность

Astrakhan State University, 20a, Tatischev st., 4140056 Astrakhan, Russia

Е-mail Danila200586@mail.ru
Выпуск Том 8, Год 2016, Номер 3
Даты Получено 15.05.2016, опубликовано online – 03.10.2016
Ссылка D.Yu. Matveev, J. Nano- Electron. Phys. 8 No 3, 03012 (2016)
DOI 10.21272/jnep.8(3).03012
PACS Number(s) 73.50.Gr, 73.50.Jt
Ключевые слова Thin films (60) , Bismuth (9) , Tellurium (3) , Mobility (9) , Size effect (6) .
Аннотация The article compares carrier mobility in monocrystals, as well as monocrystal and block films of different width thus defining carrier contribution to interaction with phonons, surface, boundaries and structural defects of crystallites in bismuth films doped with tellurium. It is determined that there is a linear dependence of inverse electron mobility on inverse width of bismuth film doped with tellurium.

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