Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor

Автор(ы) I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, A.S. Kurochka

JSC "RPC "Istok" named after Shokin", 2A, Vokzalnaya st., 141190 Fryazino, Moscow region, Russia

Выпуск Том 8, Год 2016, Номер 2
Даты Получено 12.03.2016, опубликовано online – 21.06.2016
Ссылка I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, A.S. Kurochka, J. Nano- Electron. Phys. 8 No 2, 02044 (2016)
DOI 10.21272/jnep.8(2).02044
PACS Number(s) 73.40.Lq, 85.30.Kk
Ключевые слова Gallium nitride (2) , Ohmic contacts (2) , Encapsulation, Gate AlGaN / GaN HEMT.
Аннотация Reported about study of processes of formation of Ti / Al / Ni / Au ohmic contacts to heterostructures AlGaN / GaN and gate Ni / Au. Investigated of process recess the semiconductor layer for minimum resistance of ohmic contact – 0.4 Ohm·mm. Studied influence of encapsulation ohmic contacts on their surface morphology.

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