Analysis of High Energy Ion, Proton and Co-60 Gamma Radiation Induced Damage in Advanced 200 GHz Sige HBTS

Автор(ы) K.C. Praveen1, N. Pushpa1, J.D. Cressler2, A.P. Gnana Prakash1
Принадлежность

1 Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006, India

2 School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta-30302, Georgia, USA

Е-mail kcpavi@gmail.com
Выпуск Том 3, Год 2011, Номер 1, Part 2
Даты Received 04 February 2011, in final form 29 April 2011, published online 08 May 2011
Ссылка K.C. Praveen, N. Pushpa, J.D. Cressler, et al., J. Nano- Electron. Phys. 3 No1, 348 (2011)
DOI
PACS Number(s) 72.20.Jv, 61.82.Fk, 61.80.Ed
Ключевые слова 200 GHz SIGE HBT, Co-60 gamma, Proton (2) , Lithium ion irradiation, EB spacer oxide, STI oxide.
Аннотация
Third generation advanced Silicon-Germanium Heterojunction Bipolar Transistors (200 GHz SiGe HBTs) were exposed to different radiations like 50 MeV lithium ions, 63 MeV proton and Co-60 gamma radiation in the dose range of 300 krad to 10 Mrad. The DC electrical characteristics like forward mode Gummel characteristics, inverse mode Gummel characteristics, excess base current, current gain, neutral base recombination, avalanche multiplication and output characteristics were measured before and after irradiation for three different radiations and the results are compared in this paper. The results show that the Li + ions impart more energy and create significant amount of damage in the surface and bulk of the transistor when compared to gamma and proton irradiation.

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