Numerical Investigation of Spatial Effects on the Silicon Solar Cell

Автор(ы) A.B. Nawale1, R.A. Kalal1, A.R. Chavan2, T.D. Dongale2, R.K. Kamat1

1 Embedded System and VLSI Research Laboratory, Department of Electronics, Shivaji University, 416004 Kolhapur, India

2 Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, 416004 Kolhapur, India

Выпуск Том 8, Год 2016, Номер 2
Даты Получено 07.01.2016, опубликовано online – 21.06.2016
Ссылка A.B. Nawale, R.A. Kalal, A.R. Chavan, et al., J. Nano- Electron. Phys. 8 No 2, 02002 (2016)
DOI 10.21272/jnep.8(2).02002
PACS Number(s) 85.30. – z, 88.40.fc
Ключевые слова Silicon solar cell (6) , Numerical simulation (3) , Statistical analysis.
Аннотация Investigating the effect of device dimension on the silicon solar cell, by using the PC1D numerical simulation environment, we report strong correlation of efficiency of the silicon solar cell with its size. The results showcase finer efficiency at the lower n-type thickness and higher p-type thickness. The internal quantum efficiency (IQE) and external quantum efficiency (EQE) too exhibit variation with the device size. As a whole, based on the statistical analysis, especially regression, variance, and best subsets selection, the paper depicts that the p-type thickness, ISC and VOC are the preeminent parameters to model the silicon solar cell.

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