Fabrication of β-Silicon Carbide Nanowires from Carbon Powder and Silicon Wafer

Автор(ы) Majid S. Al-Ruqeishi, Tariq Mohiuddin

Department of Physics, College of Science, Sultan Qaboos University, P.O. Box 36 P.C. 123, Al-Khoudh, Sultanate of Oman

Е-mail majidruq@squ.edu.om
Выпуск Том 8, Год 2016, Номер 2
Даты Получено 09.02.2016, опубликовано online – 21.06.2016
Ссылка Majid S. Al-Ruqeishi, Tariq Mohiuddin, J. Nano- Electron. Phys. 8 No 2, 02001 (2016)
DOI 10.21272/jnep.8(2).02001
PACS Number(s) 61.46.Bc, 61.46.Hk, 61.46.Km
Ключевые слова Carbo-thermal technique, SiC Nanowires, Nano-Optics.
Аннотация β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.

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