Simulation of Hetero-junction (GaInP/GaAs) Solar Cell Using AMPS-1D

Автор(ы) Dennai Benmoussa1, M. Boukais2, H. Benslimane1

1 Physics Laboratory in Semiconductor Devices, University of Bechar, Algeria

2 (URMER), University Abou Bakr Belkaid, B.P. 119, Tlemcen, Algeria

Выпуск Том 8, Год 2016, Номер 1
Даты Получено 29.11.2015, в отредактированной форме – 03.03.2016, опубликовано online – 15.03.2016
Ссылка Dennai Benmoussa, M. Boukais, H. Benslimane, J. Nano- Electron. Phys. 8 No 1, 01009 (2016)
DOI 10.21272/jnep.8(1).01009
PACS Number(s) 73.50.Pz, 88.40.jr
Ключевые слова Optimization (14) , Photovoltaic cell (4) , GaInP/GaAs AMPS-1D, Hetetro-junction.
Аннотация Photovoltaic conversion is the direct conversion of electromagnetic energy into electrical energy continuously. This electromagnetic energy is the most solar radiation. In this work we performed a computer modelling using AMPS 1D optimization of hetero-junction solar cells GaInP / GaAs configuration for p/n. We studied the influence of the thickness the base layer in the cell offers on the open circuit voltage, the short circuit current and efficiency.

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