Influence of Thermal Annealing on Structural and Electrical Properties of Nickel Oxide Thin Films

Автор(ы) A. Mallikarjuna Reddy1, Ch. Seshendra Reddy1, A. Sivasankar Reddy2, P. Sreedhara Reddy1
Принадлежность

1 Department of Physics Sri Venkateswara University, Tirupati-517502, India

2 Division of Advanced Material Science and Engineering, Kongju National University, Kongju City 182, Republic of Korea

Е-mail malliphysics@gmail.com
Выпуск Том 3, Год 2011, Номер 1, Part 2
Даты Received 04 February 2011, in final form 01 May 2011, published online 08 May 2011
Ссылка A. Mallikarjuna Reddy, Ch. Seshendra Reddy, et al., J. Nano- Electron. Phys. 3 No1, 225 (2011)
DOI
PACS Number(s) 43.35.Ns, 68.60.Bs
Ключевые слова Sputtering (24) , Structural properties (9) , Electrical properties (18) , Annealing temperature (5) .
Аннотация
Nickel oxide (NiO) is a potential p-type transparent conducting oxide material with suitable electrical properties. Nickel oxide thin films were deposited by dc reactive magnetron sputtering technique on unheated glass substrates, and subsequently annealed at 773 K in two different annealing processes. X-ray diffractometer studies revealed that the films exhibited (200) preferred orientation. Scanning electron microscopy and energy dispersive spectroscopy were used to study the effect of annealing temperature on surface morphology and composition of the films. The uniform grains were distributed throughout the substrate after annealed at 773 K. Electrical properties were studied by Hall effect measurements. The low electrical resistivity of 36.9 Ω cm was observed after annealing.

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