Simulation the Beta Power Sources Characteristics

Автор(ы) S.Yu. Yurchuk, S.A. Legotin , V.N. Murashev , A.A. Krasnov , Yu.K. Omel’chenko, Yu.V Osipov, S.I. Didenko , O.I. Rabinovich
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NUST “MISiS”, 4, Leninskiy Prosp., 119040 Moscow, Russia

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Выпуск Том 7, Год 2015, Номер 3
Даты Получено 27.04.2015; в отредактированной форме – 14.10.2015; опубликовано online 20.10.2015
Ссылка S.Yu. Yurchuk, S.A. Legotin, J. Nano- Electron. Phys. 7 No 3, 03014 (2015)
DOI
PACS Number(s) 00.05.Tp, 85.60.Jb
Ключевые слова Betavoltic effect of power beta source (2) , Modeling the characteristics of the spectral sensitivity, Design optimization (3) .
Аннотация In this paper the simulation of silicon beta-stimulated power sources spectral sensitivity characteristics was carried out. It was analyzed the influence of the semiconductor material characteristics (the doping level, lifetime) and power supply design on the photosensitive structures characteristics in order to optimize them.

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