Piecewise Linear and Nonlinear Window Functions for Modelling of Nanostructured Memristor Device

Автор(ы) T.D. Dongale1 , P.J. Patil1, K.P. Patil1, S.B. Mullani2, K.V. More2, S.D. Delekar2, P.K. Gaikwad3, R.K. Kamat3

1 Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur-416004, India

2 Nanoscience Research Laboratory, Department of Chemistry, Shivaji University, Kolhapur-416004, India

3 Embedded System and VLSI Research Laboratory, Department of Electronics, Shivaji University, Kolhapur-416004, India

Е-mail tdd.snst@unishivaji.ac.in, rkk_eln@unishivaji.ac.in
Выпуск Том 7, Год 2015, Номер 3
Даты Получено 09.02.2015, в отредактированной форме – 14.10.2015, опубликовано online – 20.10.2015
Ссылка T.D. Dongale, P.J. Patil, K.P. Patil, et al., J. Nano- Electron. Phys. 7 No 3, 03012 (2015)
PACS Number(s) 07.05.Tp, 73.40.Rw, 68.60.Wm.
Ключевые слова Memristor (4) , Simulation (33) , Window function.
Аннотация The present paper reports two new window functions viz. piecewise linear window function and nonlinear window function for modelling of the nanostructured memristor device. The piecewise linear window function can be used for modelling of symmetric pinched hysteresis loop in I-V plane (for digital memory applications) and the nonlinear window function can be used for modelling of nonlinear pinched hysteresis loop in I-V plane (for analog memory applications). Flexibility in the parameter selection is the main attractive feature of these window functions.

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