Study of Short Channel Effects in n-FinFET Structure for Si, GaAs, GaSb and GaN Channel Materials

Автор(ы) Tawseef A. Bhat1, M. Mustafa2, M.R. Beigh2
Принадлежность

1 Department of Electronics, Govt. Degree College (Boys), Anantnag-192101 India

2 Department of Electronics & Instrumentation Technology, University of Kashmir, Srinagar-190006 India

Е-mail tawseef.syed@gmail.com
Выпуск Том 7, Год 2015, Номер 3
Даты Получено 10.02.2015; опубликовано online 20.10.2015
Ссылка Tawseef A. Bhat, M. Mustafa, M.R. Beigh, J. Nano- Electron. Phys. 7 No 3, 03010 (2015)
DOI
PACS Number(s) 85.30.De, 85.30.Tv
Ключевые слова SCE (39) , DIBL (5) , SS (162) , Threshold voltage (15) , FinFET (7) , ITRS.
Аннотация In this paper a study of various short channel effects (SCE’s) of double gate n-FinFET structure as a function of scaling parameters for Si, GaAs, GaSb and GaN channel materials has been evaluated and presented. The simulation results presented are based on the self consistent solution of Poisson and drift-diffusion equations. In the model the carrier velocity is assumed to be saturated in the channel for all the materials. Gate length (Lg) and channel width (Wch) dependence of the various short channel effects viz., Drain Induced Barrier Lowering (DIBL), Subthreshold Slope (SS) and threshold voltage roll-off of these devices using the said materials have been studied and presented.

Список литературы