A Study the Aluminum Doped Zinc Oxide Thin Films

Автор(ы) Yacine Aoun1, Boubaker Benhaoua2 , Said Benramache2
Принадлежность

1 Mechanical Engineering Department, Faculty of Technology, University of Biskra, 07000 Biskra, Algeria

2 VTRS Laboratory, Institute of Technology, University of El-Oued, 39000 El-Oued, Algeria

Е-mail saidbenramache07@gmail.com
Выпуск Том 7, Год 2015, Номер 3
Даты Получено 31.05.2015, опубликовано online – 20.10.2015
Ссылка Yacine Aoun, Boubaker Benhaoua, Said Benramache, J. Nano- Electron. Phys. 7 No 3, 03006 (2015)
DOI
PACS Number(s) 78.66.Bz, 81.05.Cy
Ключевые слова ZnO (64) , Thin film (101) , Semiconductor doping (2) , Spray pyrolysis technique.
Аннотация We investigated the optical properties of pure and Aluminum doped zinc oxide thin films as the n-type semiconductor. In this paper, we have studied the deposition of Al doped ZnO thin films on glass substrate at 350 °C, when the films were deposited with 0, 2 and 3 wt using spray pyrolysis technique. % of Al / Zn, the substrates were heated using the solar cells method. The substrate was R217102 glass in a size of 30 × 17.5 × 1 mm. All films exhibit an average optical transparency about 85 %, in the visible region. The shift of optical transmittance towards higher wavelength can be showed by the increase of band gap energy from 3.245 to 3.281 eV with increasing of Al doping from 0 to 3 wt. %. The Urbach energy Eu increase and decrease reaching to optimal value was obtained after doping at 3 wt. %.

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