Analysis of the p-i-n-structures Electrophysical Characteristics Influence on the Spectral Characteristics Sensitivity

Автор(ы) V.N. Murashev1 , S.Yu. Yurchuk1 , S.A. Legotin1 , V.P. Yaromskiy2 , Yu.V. Osipov1, V.P. Astahov1 , D.S. El’nikov1 , S.I. Didenko1 , O.I. Rabinovich1 , K.A. Kuz’mina1
Принадлежность

1 NUST “MISiS”, 4, Leninskiy Prosp., 119040 Moscow, Russia

2 JSC "Scientific-production plant for measure technique”, 2, Pioneer St., 141070, Moscow region, Korolev, Russia

Е-mail
Выпуск Том 7, Год 2015, Номер 2
Даты Получено 27.04.2015, опубликовано online – 10.06.2015
Ссылка V.N. Murashev, S.Yu. Yurchuk, S.A. Legotin, et al., J. Nano- Electron. Phys. 7 No 2, 02023 (2015)
DOI
PACS Number(s) 00.05.Tp, 85.60.Jb
Ключевые слова Silicon p-i-n-photodiode characteristics simulation, Spectral sensitivity (2) , Optimization design of photodetectors.
Аннотация In this paper the simulation of the silicon p-i-n-photodiodes spectral sensitivity characteristics was carried out. The analysis of the semiconductor material characteristics (the doping level, lifetime, surface recombination velocity), the construction and operation modes on the photosensitive structures characteristics in order to optimize them were investigated.

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