Extracted Electronic Parameters of a Novel Ag/SnO2:In/Si/Au Schottky Diode for Solar Cell Application

Автор(ы) Mostefa Benhaliliba
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Material Technology Department, Physics Faculty, USTOMB University, BP1505 Oran, Algeria

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Выпуск Том 7, Год 2015, Номер 2
Даты Получено 19.02.2015, опубликовано online – 10.06.2015
Ссылка Mostefa Benhaliliba, J. Nano- Electron. Phys. 7 No 2, 02029 (2015)
DOI
PACS Number(s) 85.30.Hi, 85.30.Kk
Ключевые слова Schottky diode (10) , Tin oxide (8) , Current-voltage measurements, Ideality factor (10) .
Аннотация The effect of indium on the characteristics of Ag / SnO2 : In / Si / Au Schottky diode (SD) is studied. The electronic parameters, ideal factor, the effective barrier, flat band barrier height, the series resistance, the saturation current density of the diodes were extracted from the current voltage (I-V) and capacitance voltage (C-V) characteristics. The series resistance (Rs) determined by Cheung method increases (508-534 Ω) with In doping level while the barrier height still constant around 0.57 V. Norde approximation gives a similar barrier height values of 0.69 V but the series resistance reaches higher values of 5500 Ω.

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