AC Impedance Analysis of the Al/ZnO/p-Si/Al Schottky Diode: C-V Plots and Extraction of Parameters

Автор(ы) M. Benhaliliba1 , Y.S. Ocak2 , H. Mokhtari1, T. Kiliçoglu3

1 Material Technology Department, Physics Faculty, Oran University of Sciences and Technology USTO-MB, BP1505 Oran, Algeria

2 Dicle University, Education Faculty, Science Department, 21280 Diyarbakir, Turkey

3 Department of Physics, Faculty of Science, Batman University, 72000 Batman Turkey

Выпуск Том 7, Год 2015, Номер 2
Даты Получено 06.01.2015, в отредактированной форме – 06.06.2015, опубликовано online – 10.06.2015
Ссылка M. Benhaliliba, Y.S. Ocak, H. Mokhtari, T. Kiliçoglu, J. Nano- Electron. Phys. 7 No 2, 02001 (2015)
PACS Number(s) 73.30. + y, 84.37. + q
Ключевые слова Spray pyrolysis (9) , ZnO / p-Si Schottky diode, C-V characteristics (3) , Capacitance-Voltage (3) , Interface density.
Аннотация In this research, we report on the measurement of the capacitance-voltage (C-V) characteristics Al / ZnO / p-Si / Al Schottky diode at room temperature and in dark condition fabricated by spray pyrolysis process. C-V characteristics, within the range of frequencies 5 kHz-5 MHz, are investigated and microelectronic parameters are extracted. Donor density and diffusion potential vary with frequency from 15 to 28 1014 cm – 3, 0.21 to 0.45 V. Besides, the interface state density of Al /ZnO /pSi/Al Schottky is determined and found to be 1012 (eV·cm²) – 1. Calculated at 1 MHz, the interfacial layer thickness and depletion layer width are of 760 Å and 0.28 μm.

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