Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT

Автор(ы) Palash Das, Dhrubes Biswas
Принадлежность

Indian Institute of Technology Kharagpur, Kharagpur, India

Е-mail d.palash@gmail.com
Выпуск Том 7, Год 2015, Номер 1
Даты Получено 12.12.2014, опубликовано online – 25.03.2015
Ссылка Palash Das, Dhrubes Biswas, J. Nano- Electron. Phys. 7 No 1, 01006 (2015)
DOI
PACS Number(s) 73.21.Fg, 81.05.Ea, 85.30.Tv
Ключевые слова AlGaN / GaN (2) , Modeling (20) , Threshold voltage (15) , Linearity.
Аннотация In this paper, the gate threshold voltage of AlGaN / GaN HEMT devices has been analytically predicted based on the calculated energy levels inside triangular quantum well at the hetero-interface and found to be comparable with experimental data. The conceptual explanation of device linearity in large signal applications has been presented in terms of quantized energy levels in the quantum well. The dependence of threshold voltage and linear operable gate voltage range on a newly introduced parameter named “Surface Factor” is analyzed as well.

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