Modeling of Etching Nano-surfaces of Indium Phosphide

Автор(ы) S.L. Khrypko , V.V. Kidalov , E.V. Kolominska

Berdyansk State Pedagogical University, 4, Shmidta St., 71100 Berdyansk, Ukraine

Выпуск Том 7, Год 2015, Номер 1
Даты Получено 02.11.2014, опубликовано online – 25.03.2015
Ссылка S.L. Khrypko, V.V. Kidalov, E.V. Kolominska, J. Nano- Electron. Phys. 7 No 1, 01003 (2015)
PACS Number(s) 61.43.Gt, 78.30.Fs, 78.55.m
Ключевые слова InP (7) , Porous (14) , Modeling (20) , Nano-surfaces.
Аннотация This paper describes a mechanism for obtaining a regular porous structure InP, which is to use the method of photoelectrochemical etching. Through the use of simulation etching at the nanoscale, it is possible to get a regular uniform grid of nanopores on the surface of indium phosphide, which allows us to understand the mechanisms and the establishment of technological regimes anodic structures indium phosphide to produce a variety of devices.

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