Projected Range, Straggling and Sputtering Yield of the Ion-Impingement of Inert Gases in Group IV, InP and GaAs Semiconductors

Автор(ы) J.D. Femi-Oyetoro, O.E. Oyewande
Принадлежность

Department of Physics, University of Ibadan, Ibadan, Nigeria

Е-mail femi.oyetoro@yahoo.com
Выпуск Том 7, Год 2015, Номер 1
Даты Получено 02.10.2014, опубликовано online – 25.03.2015
Ссылка J.D. Femi-Oyetoro, O.E. Oyewande, J. Nano- Electron. Phys. 7 No 1, 01002 (2015)
DOI
PACS Number(s) 61.43.Bn, 61.43.Dq, 61.72.Ww
Ключевые слова Impingement, Simulation (32) , Sputtering Yield, TRIM, Straggling, Semiconductor (61) .
Аннотация One of the major challenges in ion implantation and sputtering process (especially in thin film deposition) is to get a shallow or very deep profile and maximum sputtering yield respectively. In this paper, we simulate the projected range, lateral straggle, longitudinal straggle and sputtering yield of inert gas ions (He+, Ne+, Ar+, Kr+, Xe+, Rn+) impinged in group IV elements (C, Si, Ge, Sn, Pb), InP and GaAs against different parameters (ion energy and angle of incident ion), using the TRIM Monte-Carlo Code as embedded in SRIM. In particular, we generated a result on the consistency of the projected range, lateral and longitudinal straggle with the angle of incident ion using ion energies 1 KeV and 10 KeV. However an inconsistency exists in the sputtering yield and we noticed that maximum sputtering yield occurs for certain incident angle. In conclusion, the results presented here provides parameters needed to get low or high projected range and straggling, and also the exact incident angle needed in getting the maximum sputtering yield for the ion-target combinations used.

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