Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy

Автор(ы) M.A. Bazalevsky1,2, G.I. Koltsov1, S.I. Didenko1 , S.Yu. Yurchuk1 , S.A. Legotin1 , O.I. Rabinovich1 , V.N. Murashev1 , I.P. Kazakov2
Принадлежность

1 National University of Science and Technology “MISiS”, 4, Leninsky prospect, 119049 Moscow, Russia

2 Lebedev Physics Institute, Russian Academy of Sciences, 53, Leninsky prospect, 119991 Moscow, Russia

Е-mail
Выпуск Том 6, Год 2014, Номер 3
Даты Получено 19.05.2014, опубликовано online – 15.07.2014
Ссылка M.A. Bazalevsky, G.I. Koltsov, S.I. Didenko, et al., J. Nano- Electron. Phys. 6 No 3, 03019 (2014)
DOI
PACS Number(s) 73.50.Pz, 85.60.Gz
Ключевые слова Molecular beam epitaxy, AlGaAs / GaAs, Photodetector (7) , Ultraviolet (3) , Scintillator.
Аннотация AlGaAs / GaAs photosensitive structures were grown by molecular beam epitaxy and photodetector devices were fabricated. The structures were characterized by reflection high-energy electron diffraction (RHEED), reflectance anisotropy spectroscopy (RAS) and atomic force microscopy (AFM). Spectral characteristics of p-i-n structures were calculated. It is shown that obtained structures have atomically smooth surface and abrupt heterointerfaces. Room-temperature I-V measurements of fabricated photodetectors showed low dark current Id = 3.38 nA at reverse bias Urev = 5 V.

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