On the Applicability of HF and μ-PCD Methods for Determination of Carrier Recombination Lifetime in the Non-passivated Single-crystal Silicon Samples

Автор(ы) I.М. Anfimov, S.P. Kobeleva , I.V. Schemerov , M.N. Orlova
Принадлежность

National University of Science and Technology “MISiS”, 4, Leninsky Pr., 119049 Moscow, Russia

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Выпуск Том 6, Год 2014, Номер 3
Даты Получено 19.05.2014, опубликовано online – 15.07.2014
Ссылка I.М. Anfimov, S.P. Kobeleva, I.V. Schemerov, M.N. Orlova, J. Nano- Electron. Phys. 6 No 3, 03018 (2014)
DOI
PACS Number(s) 81.05.Dz
Ключевые слова Single-crystal silicon, Contactless μ-PCD method, Carrier recombination lifetime, Photoconductivity decay.
Аннотация Comparison of the results of measuring the carrier recombination lifetime in silicon single crystals by contactless HF and microwave μ-PCD methods was carried out. It has been shown that HF method gives a large error compared with a μ-PCD method.

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