Impurity Influence on Nitride LEDs

Автор(ы) O.I. Rabinovich , S.A. Legotin , S.I. Didenko

NIST “Moscow Institute of Steel and Alloys”, 4, Leninskiy Pr., 119040 Moscow, Russian Federation

Выпуск Том 6, Год 2014, Номер 3
Даты Получено 19.05.2014, в отредактированной форме – 01.07.2014, опубликовано online – 15.07.2014
Ссылка O.I. Rabinovich, S.A. Legotin, S.I. Didenko, J. Nano- Electron. Phys. 6 No 3, 03002 (2014)
PACS Number(s) 07.05.Tp, 85.60.Jb
Ключевые слова Light emitting diode, AlGaInN, Simulation (34) , Quantum efficiency (3) .
Аннотация Light emitting diodes (LEDs) are widely used nowadays. They are used in major parts of our life. But it is still necessary to improve their characteristics. In this paper the impurity and Indium atoms influence on the LEDs characteristics is investigated by computer simulation. Simulation was carried out in Sim Windows. The program was improved for this purpose by creating new files for AlGaInN heterostructure and devices including more than 25 basic parameters. It was found that characteristics depend on impurity and indium atoms changes a lot. The optimum impurity concentration for doping barriers between quantum wells was achieved. By varying impurity and Indium concentration the distribution in AlGaInN heterostructure LEDs characteristics could be improved.

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