Investigation of CNTFET Performance with Gate Control Coefficient Effect

Автор(ы) S.A. Khan1, M. Hasan2, S.M. Mominuzzaman3
Принадлежность

1 Robotics Research Lab, School of Engineering and Computer Science, BRAC University, Bangladesh

2 Department of Electrical & Electronic Engineering, BRAC University, Bangladesh

3 Department of Electrical & Electronic Engineering, Bangladesh University of Engineering & Technology, Bangladesh

Е-mail khan.sabbir@bracu.ac.bd, momin@eee.buet.ac.bd
Выпуск Том 6, Год 2014, Номер 2
Даты Получено 23.03.2014, в отредактированной форме – 05.06.2014, опубликовано online – 20.06.2014
Ссылка S.A. Khan, M. Hasan, S.M. Mominuzzaman, J. Nano- Electron. Phys. 6 No 2, 02008 (2014)
DOI
PACS Number(s) 61.46.Fg; 85.35.Kt; 63.20.Kr
Ключевые слова Gate Control Coefficient, CNTFET (7) , Drain сurrent, Transconductance (3) .
Аннотация For the first time, a deep study of gate control coefficient (αG) effect on CNTFET performance has done in this research. A new, analytical CNTFET simulation along with multiple parameter approach has executed with 3D output in MATLAB and that used it to examine device performance. It is found that, drain current and transconductance increases with high gate control coefficient. On the other hand, total capacitance decreases with high αG value resulting improved charging energy. Likewise, drain induced barrier lowering (DIBL) decreases with αG that provides less deviation from ideal device performance. Finally, subthreshold swing comes very close to the theoretical limit at high αG which is desired for low threshold voltage and low-power operation for FETs scaled down to small sizes.

Список литературы