Comparison of Atomic Level Simulation Studies of MOSFETs Containing Silica and Lantana Nanooxide Layers

Автор(ы) K. Bikshalu1, M.V. Manasa2, V.S.K. Reddy3, P.C.S. Reddy4, K. Venkateswara Rao2
Принадлежность

1 Kakatiya university College of Engineering &Technology, Kakatiya University, Warangal A.P, India- 506001

2 Centre for Nano Science and Technology, Institute of Science and Technology, Jawaharlal Nehru Technological University Hyderabad

3 Mallareddy college of Engineering and Technology, Secunderabad – 500014

4 Jawaharlal Nehru Technological University Hyderabad, Hyderabad, Andhra Pradesh, India -500085

Е-mail
Выпуск Том 5, Год 2013, Номер 4
Даты Получено 13.08.2013, опубликовано online – 31.01.2014
Ссылка K. Bikshalu, M.V. Manasa, V.S.K. Reddy, et al., J. Nano- Electron. Phys. 5 No 4, 04058 (2013)
DOI
PACS Number(s) 85.30.Tv, 85.35. – p
Ключевые слова MOSFET (27) , Nano oxide layer, Quantum mechanical tunneling, Transmission spectra (4) , I-V characteristics (2) , Channel conductance.
Аннотация The intense downscaling of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) to nano range for improving the device performance requires a high-k dielectric material instead of conventional silica (SiO2) as to avoid Quantum Mechanical Tunneling towards the gate terminal which leads to unnecessary gate current. Out of all the rare earth oxide materials, since lanthana (La2O3) has significantly high dielectric constant (k) and bandgap, we’ve chosen it as oxide layer for one of the MOSFETs. In this work, we simulated two MOSFETs – one with nano SiO2 oxide layer and other with nano La2O3 oxide layer in the atomic level to analyze and compare the transmission spectra, I-V characteristics and Channel conductance of both the MOSFETs.

Список литературы