Effect of Annealing on Structural and Optical Properties of Cu Doped In2O3 Thin Films

Автор(ы) S. Kaleemulla , N. Madhusudhana Rao, N. Sai Krishna, M. Kuppan , M. Rigana Begam , M. Shobana
Принадлежность

Thin Films Laboratory, Materials Physics Division, School of Advanced Sciences, VIT University, Vellore 632014 Tamilnadu, India

Е-mail skaleemulla@gmail.com
Выпуск Том 5, Год 2013, Номер 4
Даты Получено 03.08.2013, опубликовано online – 31.01.2014
Ссылка S. Kaleemulla, N. Madhusudhana Rao, N. Sai Krishna, et al., J. Nano- Electron. Phys. 5 No 4, 04048 (2013)
DOI
PACS Number(s) 68.55.Jk, 73.61. – r, 78.55. – m
Ключевые слова Indium oxide, Flash evaporation (3) , Transparent conducting oxide (6) .
Аннотация Cu-doped In2O3 thin films were prepared using flash evaporation method at different Cu-doping levels. The effect of annealing was studied on the structure, morphology and optical properties of the thin films. The films exhibited cubic structure and optical transmittance of the films increasing with annealing temperature. The highest optical transmittance of 78 % was observed with band gap of 4.09 eV.

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