“The Thermal Wave” in Technology of Crystal Growth from the Melt

Автор(ы) V.G. Kosushkin1 , S.L. Kozhitov2 , Yn.N. Parkhomenko2, L.V. Kozhitov2 , L.M. Cherjakov3

1 Bauman Moscow State Technical University (Branch in Kaluga), 2, Baxhenov Str., 248600 Kaluga, Russia

2 National University of Science and Technology MISiS, 4, Leninskii Pr., 119049 Moscow, Russia

3 Southwest State University, 94, 50 let Oktyabrya, 305040 Kursk, Russia

Выпуск Том 5, Год 2013, Номер 4
Даты Получено 05.08.2013, в отредактированной форме – 29.11.2013, опубликовано online – 10.12.2013
Ссылка V.G. Kosushkin, S.L. Kozhitov, Yn.N. Parkhomenko, et al., J. Nano- Electron. Phys. 5 No 4, 04022 (2013)
PACS Number(s) 61.48.De, 81. – b
Ключевые слова Crystal growth (2) , Analytical solution, Czochralski crystal growth.
Аннотация It was found that the temperature fluctuations at the interface crystal-melt are the main reason for the formation of single crystals inhomogeneity grown by the Czochralski method. To reduce the heterogeneity of the layered method is proposed to reduce temperature fluctuations in the melt through the creation of artificial heat wave formed by the modulation of the heater temperature setting of growing single crystals. This paper describes the experimental technique to measure the temperature directly in the field of crystal growth of gallium arsenide from the melt. We investigated the possibility of special control actions for decreasing the temperature fluctuations at the crystallization front. These actions relate to the modification of the thermal and kinetic control parameters normally used in the Czochralski method of crystal growth, such as heater temperature, as well as crystal and crucible rotation rates. Unsteady low energetic thermal control actions (thermal waves, induced by periodic changes of the heater temperature) are able to eliminate temperature fluctuations near the crystal / melt interface and may be a potential tool for the growth of striation-free gallium arsenide single crystals.

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