Magnetoresistance and Anomalous Hall Effect of InSb Doped with Mn

Автор(ы) A.V. Kochura1,2 , B.A. Aronzon2, 3 , M. Alam1, A. Lashkul2 , S.F. Marenkin4, M.A. Shakhov2,5, E.P. Kochura1 , E. Lahderanta2
Принадлежность

1 Southwest State University, 94, 50 Let Oktjabrja Str., 305040 Kursk, Russia

2 Laboratory of Physics, Lappeenranta University of Technology, PO Box 20, FIN-53851, Lappeenranta, Finland

3 Russian Research Centre “Kurchatov institute”, 1 Kurchatov Sq., 123182 Moscow, Russia

4 Institute of General and Inorganic Chemistry of Russian Academy of Sciences, 31, Leninskii Pr., 119991 Moscow, Russia

5 Ioffe Physical Technical Institute, 26, Polytekhnicheskaya Str., 194021 St.-Petersburg, Russia

Е-mail akochura@mail.ru
Выпуск Том 5, Год 2013, Номер 4
Даты Получено 13.11.2013, опубликовано online – 10.12.2013
Ссылка A.V. Kochura, B.A. Aronzon, , et al., J. Nano- Electron. Phys. 5 No 4, 04015 (2013)
DOI
PACS Number(s) 72.20.Dp, 75.50.Dd, 72.20.My
Ключевые слова Spintronic materials (5) , Indium antimonide (2) , Magnetoresistivity, Anomalous Hall effect, Spin-dependent scattering, Nanoclusters (4) .
Аннотация Transport properties of polycrystalline (In, Mn)Sb samples are investigated. Behavior of the temperature and magnetic field dependencies of the resistivity, anomalous Hall coefficient and magnetoresistivity at low temperatures points out the influence of Mn complexes, Mn ions and nano- and microsizes MnSb precipitates on charge transport.

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