High Sensitivity Magnetic Sensors Based on Off-diagonal Magnetoimpedance in Amorphous FeCoSiB Wires

Автор(ы) N.A. Yudanov1, L.V. Panina1, 2 , A.T. Morchenko1, V.G. Kostishyn1 , P.A. Ryapolov3

1 National University of Science and Technology, MISIS, 4, Leninsky Ave., 119049 Moscow, Russia

2 Institute of Design Problems in Microelectronics, RAS, 124365 Moscow, Russia

3 Department of Nanotechnology and Engineering Physics, Southwest State University, 305040 Kursk, Russia

Е-mail kolyan2606@mail.ru
Выпуск Том 5, Год 2013, Номер 4
Даты Получено 05.08.2013, в отредактированной форме – 05.11.2013, опубликовано online – 10.12.2013
Ссылка N.A. Yudanov, L.V. Panina, A.T. Morchenko, V.G. Kostishyn, P.A. Ryapolov, J. Nano- Electron. Phys. 5 No 4, 04004 (2013)
PACS Number(s) 85.75.Ss, 87.85.fk
Ключевые слова Magnetoimpedance (4) , Off-diagonal impedance, MI sensor, Pulse excitation.
Аннотация The magnetoimpedance (MI) effect has a potential for the development of high performance magnetic sensors. For sensor applications, off-diagonal configuration is preferable when the MI element is excited by ac current and the output is detected from the coil. In the present work, the off-diagonal sensor design was advanced by utilising a complex waveform excitation produced by a microcontroller and applied to a multiple wire MI element. For optimised excitation with a waveform close to a positive half sine form and characteristic frequency of 8 MHz the field resolution of about 60 mV/Oe was achieved. The pulse excitation does not require an additional bias since it includes controllable low frequency components. The concept of microcontroller driven sensor element could be attractive for the development of intellectual sensors.

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