Spectroscopic Characterization of GaAs and AlxGa1 – xAs / AlyGa1 – yAs Quantum Well Heterostructures

Автор(ы) Mirgender Kumar1, V.P. Singh2
Принадлежность

1 Indian Institute of Technology (Banaras Hindu University), Varanasi-221005 India

2 Indian Institute of Technology, Kharagpur-721302 India

Е-mail mkumar.rs.ece@iitbhu.ac.in
Выпуск Том 5, Год 2013, Номер 3
Даты Получено 09.01.2013, в отредактированной форме – 02.07.2013, опубликовано online – 12.07.2013
Ссылка Mirgender Kumar, V.P. Singh, J. Nano- Electron. Phys. 5 No 3, 03006 (2013)
DOI
PACS Number(s) 73.40.Kp, 42.55.Pх
Ключевые слова Photoreflectance spectroscopy, Surface photovoltaic spectroscopy, HRXRD (3) , Heterostructures (2) .
Аннотация This work presents the results of the characterization of GaAs and AlxGa1 – xAs / AlyGa1 – yAs quantum well hetero-structures growth by MOVPE system. The main goal is to explore the ability of characterization techniques for multilayer structures like quantum wells. The characterization was performed using photoreflectance spectroscopy, surface photovoltaic spectroscopy and X-ray diffraction. The experimental results are verified by numerical simulation.

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