Electronic and Optical Properties of GaN / AlN Multiple Quantum Wells under Static External Magnetic Field

Автор(ы) M. Solaimani , M. Izadifard

Faculty of Physics, Shahrood University of Technology, Shahrood, Iran

Выпуск Том 5, Год 2013, Номер 3
Даты Получено 21.04.2013, в отредактированной форме – 08.05.2013, опубликовано online – 12.07.2013
Ссылка M. Solaimani, M. Izadifard, J. Nano- Electron. Phys. 5 No 3, 03023 (2013)
PACS Number(s) 68.65.Fg, 71.35. – y
Ключевые слова Electronic energy levels, Magnetic field (7) , Single and multiple quantum wells, Finite difference method (2) , Linear absorption coefficient.
Аннотация In this work, we have investigated the effect of an external magnetic field and, for the first time, number of wells with constant total effective length to study the degeneracy in electronic energy levels. We have used constant total effective length because it is technologically important. Then we have tried to remove the n-fold degeneracy of the n-well multiple quantum well by means of the external magnetic field but the two-fold degeneracy was remain and not removed. Finally, the effect of the external magnetic field on the number of bound states and the situation of unchanging absorption coefficient in a wide magnetic field interval are also investigated.

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