Comparison of Three Dimensional Partially and Fully Depleted SOI MOSFET Characteristics Using Mathcad

Автор(ы) Neha Goel1 , Manoj Kumar Pandey2
Принадлежность

1 Research Scholar, SRM University, NCR Campus Ghaziabad, India

2 Department of ECE, SRM University NCR Campus Ghaziabad, India

Е-mail nehagoel@rkgit.edu.in, mkspandey@gmail.com
Выпуск Том 8, Год 2016, Номер 1
Даты Получено 23.10.2015, опубликовано online – 15.03.2016
Ссылка Neha Goel, Manoj Kumar Pandey, J. Nano- Electron. Phys. 8 No 1, 01041 (2016)
DOI 10.21272/jnep.8(1).01041
PACS Number(s) 85.30.tv
Ключевые слова Silicon on insulator (SOI), Poisson’s Equation (4) , Front surface potential, Threshold voltage (15) , Electric field (6) , Drain Current (3) .
Аннотация In this Paper, comparison of three Dimensional characteristics between partially and fully depleted Silicon-On-Insulator (SOI MOSFET) is presented, this is done through 3D device modeling using mathcad, based on the numerical solution of three dimensional Poisson’s equation. Behavior of Various Parameters like Surface Potential, Threshold Voltage, Electric field and Drain current are presented in this paper.

Список литературы