Hopping Conductivity and Negative Magnetoresistance of the Bulk Nanograined Bi2Te3 Material

Автор(ы) O.N. Ivanov, R.A. Lyubushkin, M.N. Yaprintsev, I.V. Sudzhanskaya
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Belgorod State University, 85, Pobedy St., 308015 Belgorod, Russia

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Выпуск Том 7, Год 2015, Номер 4
Даты Получено 01.10.2015, опубликовано online – 24.12.2015
Ссылка O.N. Ivanov, R.A. Lyubushkin, M.N. Yaprintsev, J. Nano- Electron. Phys. 7 No 4, 04073 (2015)
DOI
PACS Number(s) 72.10.Fk, 72.15. – v
Ключевые слова Bulk nanograined materials, Hopping conductivity, Magnetoresistance (5) .
Аннотация The bulk nanograined Bi2Te3 material was prepared by the microwave assisted solvothermal method and cold isostatic pressure method. It was found that above T* ≈ 190 K the temperature dependence of the specific electrical resistivity of material is of metallic type, while below this temperature a semiconductor conductivity takes place. Within the temperature ΔT ≈ 90 K-35 K interval the electrical conductivity of material can be described by the variable-range hopping conductivity mechanism. Negative magnetoresistance was observed at the same temperature interval.

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