Theoretical Analysis of Optical Gain in GaN / AlxGa1 – x N Quantum Well Lasers

Автор(ы) K. Fellaoui, D. Abouelaoualim , A. Elkadadra , A. Oueriagli
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LPSCM, Department of Physics Faculty of Sciences Semlalia Cadi Ayaad University P.O. Box 2390, 40000 Marrakech, Morocco

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Выпуск Том 7, Год 2015, Номер 4
Даты Получено 01.07.2015, опубликовано online – 24.12.2015
Ссылка K. Fellaoui, D. Abouelaoualim, A. Elkadadra, A. Oueriagli, J. Nano- Electron. Phys. 7 No 4, 04061 (2015)
DOI
PACS Number(s) 73.21.Fg, 42.55.Px
Ключевые слова (2134) .
Аннотация In this study, we investigated numerically the effect of aluminum concentration, temperature and well width on optical gain GaN / AlxGa1 – xN quantum well lasers, taken into account effective mass approximation. The numerical results clearly show that the increasing of well width, and decreasing of temperature and Aluminum concentration, the optical gain increases.

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