Effect of a Stable Magnetic Field on Silicon Properties

Автор(ы) M.I. Timoshina1, E.V. Akimov1, A.A. Gulamov2, A.V. Kochura2 , M.B. Dobromyslov3
Принадлежность

1 Moscow Technical University of Communications and Informatics, 8a, Aviamotornaja St., 111024 Moscow, Russia

2 South-West State University, Regional Centre of Nanotechnology, 94, 50 let Octyabrya St., 305040 Kursk, Russia

3 Pacific National University, 136, Tikhookeanskaya St., 680035 Khabarovsk, Russia

Е-mail
Выпуск Том 7, Год 2015, Номер 4
Даты Получено 02.10.2015, опубликовано online – 24.12.2015
Ссылка M.I. Timoshina, E.V. Akimov, A.A. Gulamov, et al., J. Nano- Electron. Phys. 7 No 4, 04086 (2015)
DOI
PACS Number(s) 72.80.Cw, 75.47. – m, 72.40. + w
Ключевые слова Silicon (58) , Structural defects (2) , Magnetic field (7) , Electrical properties (18) .
Аннотация The effect of a constant magnetic field (0.17 T) on microhardness, kinetics of photoconductivity decline and electro conductivity in silicon crystals is studied. The nature of changes of micromechanical and electrophysical characteristics in samples is investigated as a function of time elapsed after magnetic treatment. The results obtained are discussed in terms of magnetic field stimulated processes occurring in a subsystem of structural defects.

Список литературы