The Electron Scattering on Local Potential of Crystal Defects in GaSb Whiskers

Автор(ы) A.A. Druzhinin1,2 , I.P. Ostrovskii1,2 , Yu.N. Khoverko1,2, І.I. Khytruk1
Принадлежность

1 Lviv Polytechnic National University, 12, S. Bandera St., 79013, Lviv, Ukraine

2 International Laboratory of High Magnetic Fields and Low Temperatures, 95, Gajowicka St., Wroclaw, Poland

Е-mail
Выпуск Том 7, Год 2015, Номер 4
Даты Получено 23.09.2015, опубликовано online – 24.12.2015
Ссылка A.A. Druzhinin, I.P. Ostrovskii, Yu.N. Khoverko, І.I. Khytruk, J. Nano- Electron. Phys. 7 No 4, 04084 (2015)
DOI
PACS Number(s) 42.79.Wc, 84.60.Jt
Ключевые слова Charge carrier scattering, Transport phenomena, GaSb whiskers.
Аннотация The concentration and mobility of electrons were examined by Hall measurements in n-GaSb whiskers with defect concentration of about 5 × 1017 cm – 3. The dependences of electron mobility and Hall factor on temperature were calculated using the short-range scattering models in the temperature interval 4.2-500 К. The electron interaction with different types of lattice defects was considered.

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