Model of Band Diagram LED White Light in the System of GaN/InGaN

Автор(ы) Yu.P. Holovaty1, V.G. Kosushkin1 , N.A. Khahaev1, D.A. Romanov1, L.M. Chervyakov2, E.K. Naimi3, S.L. Kozhitov3
Принадлежность

1 Bauman Moscow State Technical University, 5, 2-ya Baumanskaya St., 105005 Moskow, Russia

2 South-West State University, 94, 50 let Oktyabrya St., 305040 Kursk, Russia

3 National University of Science and Technology «MISiS», 4, Leninsky Pr., 119049 Moscow, Russia

Е-mail
Выпуск Том 7, Год 2015, Номер 4
Даты Получено 01.10.2015, опубликовано online – 24.12.2015
Ссылка Yu.P. Holovaty, V.G. Kosushkin, N.A. Khahaev, et al., J. Nano- Electron. Phys. 7 No 4, 04069 (2015)
DOI
PACS Number(s) 61.72.uj, 79.60.Bm
Ключевые слова Nitride indium-gallium (InGaN), LED simulation, The band diagram, Semiconductors (24) .
Аннотация The results of the research of semiconductor multilayer nanostructures suitable for making white light LEDs in the GaN/InGaN with red, green and blue emission spectra formed in a single chip. The methodology and the calculation of the energy levels, the wave functions of the carriers, the electric fields caused by the spontaneous polarization and the piezoelectric effect, the spontaneous emission spectrum and chromaticity coordinates of the total radiation.

Список литературы