Heterostructure Active Area Optimization by Simulation

Автор(ы) O.I. Rabinovich , S.I. Didenko , S.A. Legotin , I.V. Fedorchenko , U.V. Osipov

NUST “MISiS”, 4, Leninskiy Prosp., 119040 Moscow, Russia

Выпуск Том 7, Год 2015, Номер 4
Даты Получено 28.09.2015, опубликовано online – 10.12.2015
Ссылка O.I. Rabinovich, S.I. Didenko, S.A. Legotin, et al., J. Nano- Electron. Phys. 7 No 4, 04035 (2015)
PACS Number(s) 00.05.Tp, 85.60.Jb
Ключевые слова Light-emitting diode, InGaN (4) , Simulation (34) .
Аннотация Changing LED performance characteristics, depending on Indium atoms concentration and at different temperatures were simulated. It was suggested that a LED having p-n junction area S0 can be considered as a sum of “SmallLEDs (SLEDs)” electrically connected in parallel, each SLED has its own In-content and its own p-n junction area S(X). Good correlation in simulation and experimental results has been obtained. It was determined that the best structure for AlGaInN NH is p+GaN / p+Al0.2Ga0.8N / 4(n-InxGa1 – xN-n-GaN) / n+GaN. The main thing is that in the NH AA there are 4QW-in two central ones there is maximum radiation and two ones at the both ends of active region are “barriers” which help to concentrate electrons / holes in active region and additionally “protect” QW from different defects.

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