Microchannel Structures of Betavoltaic Silicon Convertors

Автор(ы) V.V. Starkov1, S.A. Legotin2, A.A. Krasnov2 , V.N. Murashev2, Yu.K. Omel’chenko2, O.I. Rabinovich2, A.S. Laryushkin3
Принадлежность

1 Institute of Technology microelectronics and high purity materials, Russian Academy of Sciences, 6, Institutskaya St. 142432 Chernogolovka, Russia

2 NUST “MISiS”, 4, Leninskiy Prosp., 119049 Moscow, Russia

3 JSC "Optocoupler" 105187, Shcherbakovskaya St., 53, Moscow, Russia

Е-mail
Выпуск Том 7, Год 2015, Номер 4
Даты Получено 29.09.2015, опубликовано online – 10.12.2015
Ссылка V.V. Starkov, S.A. Legotin, A.A. Krasnov, et al., J. Nano- Electron. Phys. 7 No 4, 04047 (2015)
DOI
PACS Number(s) 00.05.Tp, 85.60.Jb
Ключевые слова Betavoltic effect of power beta source (2) , Design optimization (3) , Silicon converter.
Аннотация The paper presents the first results of experimental research on the microchannel structures of betavoltaic silicon converters based on the 63Ni isotope. The areas for further optimization of constructive and technological performance with high conversion efficiency were detected experimentally.

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