The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance

Автор(ы) S.A. Legotin1 , V.N. Murashev1 , S.Yu. Yurchuk1 , V.P. Yaromskiy2 , V.P. Astahov1 , K.A. Kuz’mina1 , O.I. Rabinovich1 , D.S. El’nikov1 , U.V. Osipov1 , A.A. Krasnov1 , S.I. Didenko1
Принадлежность

1 NUST “MISiS”, 4, Leninskiy Prosp., 119040 Moscow, Russia

2 JSC "Scientific, Research & Production Corporation of Measuring Equipment", 2, Pioneer St., 141074 Moscow region, Korolev, Russia

Е-mail
Выпуск Том 7, Год 2015, Номер 4
Даты Получено 29.09.2015, опубликовано online – 10.12.2015
Ссылка S.A. Legotin, V.N. Murashev, S.Yu. Yurchuk, et al., J. Nano- Electron. Phys. 7 No 4, 04017 (2015)
DOI
PACS Number(s) 00.05.Tp, 85.60.Jb
Ключевые слова Silicon p-i-n structure, Design optimization (3) .
Аннотация In the paper a simulation program for photovoltaic parameters of semiconductor devices and results of their investigation are presented. The results of the program usage based on an example of calculating the influence of the high-resistance "well" thickness in the silicon p-i-n-diode spectral response are discussed. For the accuracy of the program estimation it was compared the theoretical spectral characteristics of a silicon PIN-diode 5 kOhm substrate with the experimental data.

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