Results (15):

Title Effect of Grain Size on the Threshold Voltage for Double-Gate Polycrystaline Silicon MOSFET
Authors Mahesh Chandra, Alka Panwar, B.P. Tyag
Issue Volume 3, Year 2011, Number 1, Part 3
Pages 0474 - 0478
Title Two Dimensional Analytical Modeling for SOI and SON MOSFET and Their Performance Comparison
Authors Saptarsi Ghosh, Khomdram Jolson Singh, Sanjay Deb, Subir Kumar Sarkar
Issue Volume 3, Year 2011, Number 1, Part 3
Pages 0569 - 0575
Title Two-Dimensional Analytical Modeling of Threshold Voltage of Doped Short-Channel Triple-Material Double-Gate (Tm-Dg) MOSFET's
Authors Sarvesh Dubey, Dheeraj Gupta, Pramod Kumar Tiwari, S. Jit
Issue Volume 3, Year 2011, Number 1, Part 3
Pages 0576 - 0583
Title A 2-D Analytical Threshold Voltage Model for Symmetric Double Gate MOSFET's Using Green’s Function
Authors Anoop Garg, S.N. Sinha, R.P. Agarwal
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 0894 - 0902
Title A Doping Dependent Threshold Voltage Model of Uniformly Doped Short-Channel Symmetric Double-Gate (DG) MOSFET’s
Authors P.K. Tiwari, S. Dubey, S. Jit
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 0963 - 0971
Title Impact of Scaling Gate Insulator Thickness on the Performance of Carbon Nanotube Field Effect Transistors (CNTFETs)
Authors Devi Dass, Rakesh Prasher, Rakesh Vaid
Issue Volume 5, Year 2013, Number 2
Pages 02014-1 - 02014-6
Title Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT
Authors Palash Das, Dhrubes Biswas
Issue Volume 7, Year 2015, Number 1
Pages 01006-1 - 01006-3
Title Surface Potential and Threshold Voltage Model of Fully Depleted Narrow Channel SOI MOSFET Using Analytical Solution of 3D Poisson’s Equation
Authors Prashant Mani, Manoj Kumar Pandey
Issue Volume 7, Year 2015, Number 2
Pages 02002-1 - 02002-5
Title Study of Short Channel Effects in n-FinFET Structure for Si, GaAs, GaSb and GaN Channel Materials
Authors Tawseef A. Bhat, M. Mustafa, M.R. Beigh
Issue Volume 7, Year 2015, Number 3
Pages 03010-1 - 03010-5
Title Comparison of Three Dimensional Partially and Fully Depleted SOI MOSFET Characteristics Using Mathcad
Authors Neha Goel, Manoj Kumar Pandey
Issue Volume 8, Year 2016, Number 1
Pages 01041-1 - 01041-4
Title An Analytical Universal Model for Symmetric Double Gate Junctionless Transistors
Authors N. Bora, P. Das, R. Subadar
Issue Volume 8, Year 2016, Number 2
Pages 02003-1 - 02003-4
Title Design Device for Subthreshold Slope in DG Fully Depleted SOI MOSFET
Authors Neha Goel, Manoj Kumar Pandey
Issue Volume 9, Year 2017, Number 1
Pages 01022-1 - 01022-4
Title Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor
Authors Manjula Vijh, R.S. Gupta, Sujata Pandey
Issue Volume 9, Year 2017, Number 1
Pages 01030-1 - 01030-4
Title Numerical Simulation and Mathematical Modeling of 3D DG SOI MOSFET with the Influence of Biasing with Back Gate
Authors Neha Goel, Manoj Kumar Pandey
Issue Volume 9, Year 2017, Number 5
Pages 05002-1 - 05002-4
Title Analytical Modeling & Simulation of OFF-State Leakage Current for Lightly Doped MOSFETs
Authors Nitin Sachdeva, Munish Vashishath, P.K. Bansal
Issue Volume 9, Year 2017, Number 6
Pages 06009-1 - 06009-4