| Title | Field-Effect Transistor Based on Reduced Graphene Oxide Film with ZnO and Porous Silicon Absorbing Layers for Ionizing Radiation Detection | |
| Authors | I.B. Olenych, Yu.Yu. Horbenko, M.R. Pavlyk, B.S. Sokolovskii, O.S. Dzendzelyuk | |
| Issue | Volume 18, Year 2026, Number 2 | |
| Pages | 02026-1 - 02026-5 | |
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