A Comparative Study of Increasing Sensitivity Based on MoS2 Gas Sensor

Автор(и) S.R. Shakil1, N. Tarannum1, M.K. Rhaman1,2,
Приналежність

1 Robotics Research Laboratory, BRAC University, Bangladesh

2 Nano Satellite Technology and Research Laboratory, BRAC University, Bangladesh

Е-mail shifur.rahman@bracu.ac.bd, khalilur@bracu.ac.bd
Випуск Том 9, Рік 2017, Номер 6
Дати Одержано 18.08.2017, у відредагованій формі - 15.11.2017, опубліковано online - 24.11.2017
Посилання S.R. Shakil, N. Tarannum, M.K. Rhaman, J. Nano- Electron. Phys. 9 No 6, 06003 (2017)
DOI 10.21272/jnep.9(6).06003
PACS Number(s) 31.15.es, 31.15.at
Ключові слова NEGF (3) , Gas sensor (4) , Electron density of states, Transport properties (3) .
Анотація A theoretical study of NO2 sensing capability of MoS2 doped with elements including Si and Fe is carried out. To understand the interaction effects between MoS2 and NO2 in consideration of electronic transport properties has been observed carefully. By bringing dopants and defects into the 2D sheets of MoS2 have significant effects on transport properties which are observed from I-V curves. Finally, we conclude that MoS2 can be used as potential gas sensor and the sensing properties of MoS2 can be enhanced with Fe dopant.

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