New Optimized Intermediate Band (IB) Design to Improve ZnTeO Solar Cell Performances

Автор(и) B. Lakehal1,2, Z. Dibi2, N. Lakhdar3
Приналежність

1 Department of Electronics, University of Kasdi Merbah Ouargla, 30000 Ouargla, Algeria

2 LAAAS Laboratory, University of Batna1, 05000 Batna, Algeria

3 Department of Electrical Engineering, University of El Oued, 39000 El Oued, Algeria

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Випуск Том 9, Рік 2017, Номер 6
Дати Одержано 02.07.2017, у відредагованій формі - 15.11.2017, опубліковано online - 24.11.2017
Посилання B. Lakehal, Z. Dibi, N. Lakhdar, J. Nano- Electron. Phys. 9 No 6, 06005 (2017)
DOI 10.21272/jnep.9(6).06005
PACS Number(s) 85.55.De, 84.60.Jt
Ключові слова Intermediate band, Genetic algorithms, Optimization (11) , Conversion efficiency (4) .
Анотація In this paper, a genetic algorithm-based approach is proposed to extract and optimize the design parameters of the intermediate band solar cell (IBSC) in order to improve the electrical performance and the conversion efficiency behavior of the device. The proposed approach is applied to investigate the effect of the energy level (Ei) intermediate band (IB) and electronic states density (Ni) influence on cell efficiency. The presented analytical models are used as objective functions, which are required for our optimization approach. The obtained results are compared with analytical results found in literature indicating the applicability of the genetic algorithm technique to study the electrical behavior of the IBSC design. Therefore, this approach will be extended to alternative solar cell for motivating experimental efforts to realize these promising photovoltaic devices.

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