Effects of Stone-Wales Defect Position in Graphene Nanoribbon Field-Effect Transistor

Автор(и) H. Owlia, P. Keshavarzi, M.B. Nasrollahnejad
Приналежність

Electrical and Computer Engineering Department, Semnan University, 3513119111 Semnan, Iran

Е-mail hadi.owlia@gmail.com, pkeshavarzi@semnan.ac.ir, mnasrollahnejad@semnan.ac.ir
Випуск Том 9, Рік 2017, Номер 6
Дати Одержано 25.07.2017, у відредагованій формі - 15.11.2017, опубліковано online - 24.11.2017
Посилання H. Owlia, P. Keshavarzi, M.B. Nasrollahnejad, J. Nano- Electron. Phys. 9 No 6, 06008 (2017)
DOI 10.21272/jnep.9(6).06008
PACS Number(s) 85.35. – p, 85.30.Tv, 68.65.Pq, 72.80.Vp, 73.22.Pr
Ключові слова Device simulation (2) , Graphene nanoribbon field-effect transistor (GNRFET), Non-equilibrium Green's function (NEGF), Stone-Wales defect (2) .
Анотація In this paper, the current-voltage characteristics of a double-gated monolayer armchair graphene nanoribbon field-effect transistor (DG-AGNRFET) is investigated by introducing a Stone-Wales (SW) defect. After changing positions of the defect in width and length of the channel, it is found that the SW defect decreases off current and leads to the further reduction of the off current as the defect moves to the edge. However, this defect has not shown a notable impact on the on current. The results have confirmed the possibility of controlling the electron transport of the DG-AGNRFET by defect engineering can be useful to extend the applications of graphene nanoribbon-based devices. The device has been simulated based on the self-consistent solution of a 3D Poisson-Schrödinger equation using non-equilibrium Green's function (NEGF) formalism.

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