Development of Numerical Method for Optimizing Silicon Solar Cell Efficiency

Автор(и) E. Chahid1,2, M. Fedaoui2, M. Nachaoui3, N.R. Chowdhury4, A. Malaoui1

1 Laboratoire Interdisciplinaire de Recherche en Sciences et Techniques (LIRST), Faculté Polydisciplinaire, Université Sultan Moulay Slimane, Beni Mellal, Morocco

2 Laboratory of energy engineering, Materials and systems National School Applied Sciences, University Ibn Zohr, Agadir, Morocco.

3 Laboratory of Applied Mathematica, Sultan Moulay Slimane University, Beni Mellal, Morocco

4 Department of Energy System Engineering, Institute of Energy Studies, University of North Dakota, USA

Випуск Том 9, Рік 2017, Номер 4
Дати Одержано 18.04.2017, у відредагованій формі - 25.07.2017, опубліковано online - 27.07.2017
Посилання E. Chahid, M. Fedaoui, M. Nachaoui, et al., J. Nano- Electron. Phys. 9 No 4, 04019 (2017)
DOI 10.21272/jnep.9(4).04019
PACS Number(s) 73.40.Lq, 84.60.Jt
Ключові слова Photocurrent density, Solar cell (37) , Efficiency (15) , Finite difference method (2) , Tridiagonal matrix.
Анотація This paper presents a development of numerical method to determine and optimize the photocurrent densities in silicon solar cell. This method is based on finite difference algorithm to resolve the continuity and Poisson equations of minority charge carriers in p-n junction regions by using Thoma’s algorithm to resolve the tridiagonal matrix. These equations include several physical parameters as the absorption coefficient and the reflection one of the material under the sunlight irradiation of AM1.5 solar spectrum. In this work, we study the effect of various parameters such as thickness and doping concentration of the (emitter, base) layers on crystalline silicon solar cell perfomance. The obtained results show that the optimum energy conversion efficiency is 22.16 % with the following electrical parameters solar cell Voc  0.62 V and Jph  43.20 mAcm – 2. These results are compared with experimental data and show a good agreement of our developped method.

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