Impact of SWCNT Band Gaps on the Performance of a Ballistic Carbon Nanotube Field Effect Transistors (CNTFETs)

Автор(и) Devi Dass1, Rakesh Vaid2
Приналежність

1 Department of Electronics, Govt. Degree College, Bhaderwah 182222, J & K, India

2 Department of Electronics, University of Jammu, Jammu 180006, J & K, India

Е-mail devidassp1223@gmail.com
Випуск Том 9, Рік 2017, Номер 4
Дати Одержано 21.02.2017, опубліковано online - 27.07.2017
Посилання Devi Dass, Rakesh Vaid, J. Nano- Electron. Phys. 9 No 4, 04007 (2017)
DOI 10.21272/jnep.9(4).04007
PACS Number(s) 81.07.De, 85.35.Kt, 85.30.Tv
Ключові слова Band gap (25) , SWCNT, CNTFET (5) , Fettoy, Gate dielectric thickness.
Анотація Band gap is an important property in designing single-walled carbon nanotube (SWCNT) for nanoelectronic devices. This paper describes the impact of SWCNT band gaps on the performance of a ballistic carbon nanotube field effect transistor (CNTFET) using the 2D numerical simulator. The results demonstrate that with the reduction in SWCNT band gap the performance parameters such as transconductance, output conductance, Ion/Ioff current ratio, gain, and carrier injection velocity enhanced while the short channel effects subthreshold slope and drain-induced barrier lowering get suppressed. The enhanced device performance and reduced short channel effects of CNTFET with the reduction in SWCNT band gaps signifying that the CNTFET is a suitable nanoelectronic device for amplification purposes, low power analog and digital circuits, high-speed and low power applications.

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