Fabrication of ZnxCd1–xSe Nanowires by cvd Process and Photoluminescence Studies

Автор(и) R.P. Vijayalakshmi1 , G. Murali1 , D. Amaranatha Reddy1 , R. Venugopal2
Приналежність

1 S.V. University, Dept. of Physics, 517 502, Tirupati, A.P. India

2 Govt. Degree College, Puttur. Dept. of Physics, Chittoor, A.P. India

Е-mail vijayaraguru@gmail.com
Випуск Том 3, Рік 2011, Номер 1, Part 1
Дати Received 04 February 2011, in final form 20 March 2011, published online 23 March 2011
Посилання R.P. Vijayalakshmi, G. Murali, D. Amaranatha Reddy, R. Venugopal, J. Nano- Electron. Phys. 3 No1, 140 (2011)
DOI
PACS Number(s) 62.23.Hj
Ключові слова ZnxCd1-xSe nanowires, CVD (19) , Photoluminescence (15) , Semiconductor nanowires, II-IV nanowires, TEM (53) , XRD (45) .
Анотація
ZnxCd1 – xSe alloy nanowires with composition x = 0.2, 0.5 have been successfully synthesized by a simple thermal evaporation on the silicon substrate coated with a gold film of 20 Å thickness. The as-synthesized alloy nanowires, 70 - 150 nm in diameter and several tens of micrometer in length. The nanowires are single crystalline revealed from Transmission electron microscopy (TEM) and XRD measurement. The structure of ZnxCd1 – xSe nanowires are hexagonal wurtzite with [01-10] growth direction. Energy gap of the ZnxCd1 – xSe nanowires are determined from micro photoluminescence measurements. The energy gap increases with increasing Zn concentration.

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