Effect of PH on the Physical Properties of ZnIn2Se4 Thin Films Grown by Chemical Bath Deposition

Автор(и) P. Babu, M.V. Reddy, N. Revathi, K.T.R. Reddy
Приналежність Thin Film Laboratory, Department of Physics, Sri Venkateswara University, Tirupati – 517502, India
Е-mail ktrkreddy@gmail.com
Випуск Том 3, Рік 2011, Номер 1, Part 1
Дати Received 04 February 2011, in final form 20 March 2011, published online 23 March 2011
Посилання P. Babu, M.V. Reddy, N. Revathi, K.T.R. Reddy, J. Nano- Electron. Phys. 3 No1, 85 (2011)
DOI
PACS Number(s) 73.61.Ga,71.23.Cq, 61.05.Cp, 68.37.Hk, 78.20.Ci
Ключові слова ZnIn2Se4, EDAX (6) , XRD (47) , SEM (88) , Optical properties (17) .
Анотація
Recently there has been much interest on the preparation and characterization of ternary semiconducting materials, mainly ZnIn2Se4 (ZIS) due to its potential applications in various fields, particularly as a buffer layer in the fabrication of heterojuction solar cells. In the present work, thin films of ZIS have been synthesized by a simple and economic method, chemical bath deposition at different pH values that vary from 9 to 11. The deposition was carried out for a fixed bath temperature (Tb) of 90 °C and constant reaction time of 60 min. Ammonia and hydrazine hydrate were used as complexing agents. The chemical and physical properties of the deposited ZIS films were analyzed using appropriate techniques. The X-ray diffraction analysis revealed that the deposited films were polycrystalline and showed (112) peak as the preferred orientation. Scanning electron micrographs revealed that the samples had large number of granule like particles in different sizes. The optical transmittance of these samples was found to be > 75 % in the visible region and the evaluated energy band gap varied from 2.15 eV to 2.64 eV with the change of pH value in the range, 9 - 11. The detailed study of these results were presented and discussed.

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