Calculation of the Point Defects Ensemble in Zinc Sulfide Single Crystals and Films

Author(s) D.I. Kurbatov
Affiliations

Sumy State University, 2, Rimsky Korsakov Str., 40007 Sumy, Ukraine

Е-mail kurd@ukr.net
Issue Volume 4, Year 2012, Number 3
Dates Received 30 August 2012; published online 07 November 2012
Citation D.I. Kurbatov, J. Nano- Electron. Phys. 4 No 3, 03027 (2012)
DOI
PACS Number(s) 61.72.J, 73.61.Ga
Key words Point defects, Zinc sulfide, Quasi-chemical formalism, Single crystals, Films (71) , Defects concentration.
Annotation In work calculation of concentration of the neutral and charged point defects, positions of Fermi level and free charge carriers in zinc sulfide single crystals and films depending on their condensation conditions was carried out. For calculations used the experimentally found energy levels of defects in ZnS band gap.

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