Migration of Impurities in the Structure of Graphene

Author(s) A.S. Dolgov , Ju.L. Zhabchyk
Affiliations

Zhukovsky National Airspace University “KhAI”,Chkalova Street 17, 61070, Kharkov, Ukraine

Е-mail julia.zhabchyk@gmail.com
Issue Volume 4, Year 2012, Number 3
Dates Received 28 January 2012; revised manuscript received 14 April 2012; published online 30 October 2012
Citation A.S. Dolgov, Ju.L. Zhabchyk, J. Nano- Electron. Phys. 4 No 3, 03021 (2012)
DOI
PACS Number(s) 66.30.Pa
Key words Graphene (17) , Impurities, Migration, Generating function, Distribution of atoms.
Annotation
The laws of single-particle migration of atoms in the one-layer hexagonal structure are considered. It is accepted that impurity atom contacts with one of structure cell and can execute the single-order jumps. The exact solution of the infinite collection of microscopic equation of migration is written in the technique of the generating function and appropriate macroscopic characteristics are found. It is determined that the general pattern of transfer quality coincides with the law of particle diffuse propagation and rate of process propagation in the graphene structure exceeds the analogous value for the comparable two-dimensional square array. The method for finding the exact solution of migration problem in the limited medium is formulated on the basis of results for infinite medium. The migration pattern in the frontier area of the graphene sheet and in the structure which is shaping the carbon nanotubes is defined. The probable variations of the observed characteristics which are connected with the impurity availability which is the corollary of migration are discussed.

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