Tensoresistive Properties of Thin Film Systems Based on Ag and Co

Author(s) I.M. Pazukha , Z.M. Makukha , Yu.M. Shabelnyk , I.Yu. Protsenko
Affiliations

Sumy State University, 2, Rimsky Korsakov Str., 40007 Sumy, Ukraine

Е-mail protsenko@aph.sumdu.edu.ua
Issue Volume 4, Year 2012, Number 3
Dates Received 29 September 2012; revised manuscript received 14 October 2012; published online 30 October 2012
Citation I.M. Pazukha, Z.M. Makukha, Yu.M. Shabelnyk, I.Yu. Protsenko, J. Nano- Electron. Phys. 4 No 3, 03020 (2012)
DOI
PACS Number(s) 60.68.Bs, 72.10.Fk, 73.63.Bd
Key words Two-layer film systems, Tensoresistive effect, Gauge factor, Strain and plastic deformation, Interface scattering.
Annotation
The results of research strain deformation properties of thin films Ag, Co and two-layers films Ag/Co in the range of deformation Δεl = 0-1 % were presented. The plastic deformation in Co layer caused a similar deformation in the entire film system, even if the strain range Ag layer is not reached the limits of the transition elastic/plastic deformation. The increasing of gauge factor value of two-layer systems in comparison with thin films Ag and Co appears as a result of electron interface scattering.

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