Nucleation Processes at Condensation of Amorphous Chalcogenide Semiconductor Films

Author(s) A.V. Dalekorey1, V.P Ivanitsky1, V.S. Kovtunenko2 , R.O. Meshko1
Affiliations

1 Uzhgorod National University, 46, Pidgirna Str., 88000, Uzhgorod, Ukraine

2 Cherkask State Technological University, 460, Shevchenko Ave., 18006, Cherkasy, Ukraine

Е-mail toljadal@yandex.ru, ivanc@mail.uzhgorod.ua
Issue Volume 4, Year 2012, Number 3
Dates Received 15 February 2012; published online 30 October 2012
Citation English version unavailable
DOI
PACS Number(s) 64.60.qj, 68.03.Fg
Key words Condensation mechanism, Amorphous films, Island films, Mass-spectrometry.
Annotation
The initial stages of nucleation of amorphous chalcogenide semiconductor films were investigated theoretically and experimentally. The important role of the complex mass spectrometry of the vapor phase in the process of nucleation and growth of amorphous chalcogenides island on uniform substrate surface was found.

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